Impact of 3D growth and SiNx interlayer on the quality of (11-22) semi-polar GaN grown on m-plane sapphire

We report the growth of semi-polar (11−22) GaN films with low defect densities on m-plane sapphire substrates by incorporating a porous SiNx interlayer in a three-stage growth process. The linewidth of X-ray diffraction rocking curves for our semi-polar GaN films decrease with increasing SiNx deposi...

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Bibliographic Details
Published in:Applied physics express 2019-11, Vol.12 (11)
Main Authors: Xing, Kun, Chen, Shirong, Tao, Xiao, Lee, Chiaan, Wang, Jiangtao, Xu, Qi, Liang, Huaguo
Format: Article
Language:English
Online Access:Get full text
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Summary:We report the growth of semi-polar (11−22) GaN films with low defect densities on m-plane sapphire substrates by incorporating a porous SiNx interlayer in a three-stage growth process. The linewidth of X-ray diffraction rocking curves for our semi-polar GaN films decrease with increasing SiNx deposition time. Cross-sectional transmission electron microscopy analyzes confirm that the proposed three-stage growth process greatly reduces the semi-polar GaN threading dislocation densities down to 7 × 108 cm−2. Photoluminescence measurements demonstrate that InGaN/GaN quantum wells grown on our semi-polar GaN films provide peak intensities that are 26-fold greater than those grown on semi-polar GaN by a standard method.
ISSN:1882-0778
1882-0786
DOI:10.7567/1882-0786/ab47b7