Photonics integrated circuits using AlxGa1−xN based UVC light-emitting diodes, photodetectors and waveguides

We report on a study of UVC photonics integrated circuit consisting of monolithically integrated AlxGa1−xN multiple quantum wells based light-emitting diodes, detectors and channel waveguides on sapphire substrates. The waveguide stack consisted of a 1.5 m thick n-Al0.65Ga0.35N waveguide over an AlN...

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Bibliographic Details
Published in:Applied physics express 2020-02, Vol.13 (2)
Main Authors: Floyd, Richard, Hussain, Kamal, Mamun, Abdullah, Gaevski, Mikhail, Simin, Grigory, Chandrashekhar, MVS, Khan, Asif
Format: Article
Language:English
Subjects:
AlGaN detector
AlGaN LED
high Al composition
monolithic integration
Photonic Integrated Circuit
UVC waveguide
waveguide Loss
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Summary:We report on a study of UVC photonics integrated circuit consisting of monolithically integrated AlxGa1−xN multiple quantum wells based light-emitting diodes, detectors and channel waveguides on sapphire substrates. The waveguide stack consisted of a 1.5 m thick n-Al0.65Ga0.35N waveguide over an AlN (3.5 m thick) clad layer. Using the integrated devices, we estimated the multi-mode ridge waveguide losses to be 23 cm−1 at λemission ∼ 280 nm. We also measured that approximately 80% of the guided light was confined in the n+-Al0.65Ga0.35N layer, 7% in the underlying AlN cladding and the remaining 13% in the double-side polished sapphire substrate.
ISSN:1882-0778
1882-0786
DOI:10.7567/1882-0786/ab6410