A self-limiting layer-by-layer etching technique for 2H-MoS2

We report controlled layer-by-layer removal of large-area, sulfurized, single-crystal molybdenum disulfide (MoS2) films using a digital etching technique, which utilizes oxidation and removal of the oxidized layer. We demonstrate a self-limiting oxidation process where Mo oxide covered the surface o...

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Bibliographic Details
Published in:Applied physics express 2017-03, Vol.10 (3)
Main Authors: Lee, Choong Hee, Lee, Edwin W., McCulloch, William, Jamal-Eddine, Zane, Krishnamoorthy, Sriram, Newburger, Michael J, Kawakami, Roland K., Wu, Yiying, Rajan, Siddharth
Format: Article
Language:English
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Summary:We report controlled layer-by-layer removal of large-area, sulfurized, single-crystal molybdenum disulfide (MoS2) films using a digital etching technique, which utilizes oxidation and removal of the oxidized layer. We demonstrate a self-limiting oxidation process where Mo oxide covered the surface of MoS2. A constant etching rate of one monolayer/cycle and the uniformity of the etching process were also verified. We show that the etching of an integer number of MoS2 layers can be precisely controlled. No noticeable film quality degradation was observed after multiple cycles of digital etching, as confirmed by Raman mapping of the ratio of the and A1g peak intensities.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.10.035201