Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain

Enhancement-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors with low series resistance were achieved by Si-ion implantation doping of the source/drain contacts and access regions. An unintentionally doped Ga2O3 channel with low background carrier concentration that was fully depleted...

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Bibliographic Details
Published in:Applied physics express 2017-04, Vol.10 (4)
Main Authors: Wong, Man Hoi, Nakata, Yoshiaki, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka
Format: Article
Language:English
Online Access:Get full text
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Summary:Enhancement-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors with low series resistance were achieved by Si-ion implantation doping of the source/drain contacts and access regions. An unintentionally doped Ga2O3 channel with low background carrier concentration that was fully depleted at a gate bias of 0 V gave rise to a positive threshold voltage without additional constraints on the channel dimensions or device architecture. Transistors with a channel length of 4 µm delivered a maximum drain current density (IDS) of 1.4 mA/mm and an IDS on/off ratio near 106. Nonidealities associated with the Al2O3 gate dielectric as well as their impact on enhancement-mode device performance are discussed.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.10.041101