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Hybrid density functional analysis of distribution of carbon-related defect levels at 4H-SiC(0001)/SiO2 interface

Silicon carbide (SiC)-based metal-oxide-semiconductor devices suffer from carrier mobility degradation due to defects at the SiC/SiO2 interface. The carbon-related defects Si2>C=O and Si2>C=C

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Bibliographic Details
Published in:Applied physics express 2018-01, Vol.11 (1)
Main Authors: Kaneko, Tomoaki, Tajima, Nobuo, Yamasaki, Takahiro, Nara, Jun, Schimizu, Tatsuo, Kato, Koichi, Ohno, Takahisa
Format: Article
Language:English
Online Access:Get full text
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Description
Summary:Silicon carbide (SiC)-based metal-oxide-semiconductor devices suffer from carrier mobility degradation due to defects at the SiC/SiO2 interface. The carbon-related defects Si2>C=O and Si2>C=C
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.11.011302