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Hybrid density functional analysis of distribution of carbon-related defect levels at 4H-SiC(0001)/SiO2 interface
Silicon carbide (SiC)-based metal-oxide-semiconductor devices suffer from carrier mobility degradation due to defects at the SiC/SiO2 interface. The carbon-related defects Si2>C=O and Si2>C=C
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Published in: | Applied physics express 2018-01, Vol.11 (1) |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Online Access: | Get full text |
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Summary: | Silicon carbide (SiC)-based metal-oxide-semiconductor devices suffer from carrier mobility degradation due to defects at the SiC/SiO2 interface. The carbon-related defects Si2>C=O and Si2>C=C |
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ISSN: | 1882-0778 1882-0786 |
DOI: | 10.7567/APEX.11.011302 |