Three-dimensional atomic arrangement around active/inactive dopant sites in boron-doped diamond

Boron-doped diamond has received significant attention as an advanced material for power devices owing to its high breakdown characteristics. To control the characteristics of diamond related to band conduction, it is essential to determine the atomic structure around dopants and to develop a method...

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Bibliographic Details
Published in:Applied physics express 2018-06, Vol.11 (6), p.61302
Main Authors: Kato, Yukako, Tsujikawa, Daichi, Hashimoto, Yusuke, Yoshida, Taisuke, Fukami, Shun, Matsuda, Hiroyuki, Taguchi, Munetaka, Matsushita, Tomohiro, Daimon, Hiroshi
Format: Article
Language:English
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Summary:Boron-doped diamond has received significant attention as an advanced material for power devices owing to its high breakdown characteristics. To control the characteristics of diamond related to band conduction, it is essential to determine the atomic structure around dopants and to develop a method of controlling the atomic arrangement around dopants. We measured the photoelectron diffraction of a boron-doped diamond using a display-type ellipsoidal mesh analyzer to examine the dopant sites in heavily boron-doped diamond. The B 1s photoelectron spectrum shows two peaks for different chemical bonding sites. These two dopant sites were identified as the substitutional and interstitial sites in diamond.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.11.061302