Effect of Sn atoms on incorporation of vacancies in epitaxial Ge1−xSnx film grown at low temperature

The anomalous increase and decrease in the S-parameters of Doppler broadening spectroscopy in positron annihilation spectroscopy in a narrow range of Sn atom content were detected in a Ge1−xSnx thin film grown by MBE at low temperatures. The increase can be explained in terms of vacancies when the t...

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Bibliographic Details
Published in:Applied physics express 2014-02, Vol.7 (2)
Main Authors: Kamiyama, Eiji, Nakagawa, Satoko, Sueoka, Koji, Ohmura, Takuma, Asano, Takanori, Nakatsuka, Osamu, Taoka, Noriyuki, Zaima, Shigeaki, Izunome, Koji, Kashima, Kazuhiko
Format: Article
Language:English
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Summary:The anomalous increase and decrease in the S-parameters of Doppler broadening spectroscopy in positron annihilation spectroscopy in a narrow range of Sn atom content were detected in a Ge1−xSnx thin film grown by MBE at low temperatures. The increase can be explained in terms of vacancies when the target content of 1.7% Sn atoms is incorporated in a Ge matrix, owing to the binding nature between them. However, the S-parameters were markedly decreased when the target content of Sn atoms in the film grown at the same temperature was 0.1%. These changes in the S-parameters correspond to the carrier concentrations obtained by Hall measurements.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.7.021302