Electrical spin injection from ferromagnet into an InAs quantum well through a MgO tunnel barrier

The electrical spin injection from Ni81Fe19 (NiFe) into an InAs quantum well through a MgO tunneling barrier has been investigated for potential application to an InAs-based spin field-effect transistor. The insertion of a 2-nm-thick MgO tunnel barrier between NiFe and InAs increased the junction re...

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Bibliographic Details
Published in:Applied physics express 2014-07, Vol.7 (7), p.73001
Main Authors: Ishikura, Tomotsugu, Liefeith, Lenanrt-Knud, Cui, Zhixin, Konishi, Keita, Yoh, Kanji, Uemura, Tetsuya
Format: Article
Language:English
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Summary:The electrical spin injection from Ni81Fe19 (NiFe) into an InAs quantum well through a MgO tunneling barrier has been investigated for potential application to an InAs-based spin field-effect transistor. The insertion of a 2-nm-thick MgO tunnel barrier between NiFe and InAs increased the junction resistance by two orders of magnitude compared with that without a MgO barrier. The sample with a MgO barrier showed a clear nonlocal spin-valve signal at 1.4 K, possibly due to the alleviation of the impedance mismatching problem. The estimated spin polarization was 8.1%, which is higher than any reported in the literature for a NiFe/InGaAs Schottky junction.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.7.073001