Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS

A Ge CMOS inverter and a ring oscillator composed of Si-passivated ultrathin-body (UTB, 10 nm) depletion-type poly-Ge p- and n-MISFETs with a single metal gate have been successfully fabricated and demonstrated for the first time. A low Ioff coming from a depletion-type thin channel, a thermally sta...

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Bibliographic Details
Published in:Applied physics express 2014-12, Vol.7 (12), p.121302
Main Authors: Kamata, Yoshiki, Koike, Masahiro, Kurosawa, Etsuo, Kurosawa, Masashi, Ota, Hiroyuki, Nakatsuka, Osamu, Zaima, Shigeaki, Tezuka, Tsutomu
Format: Article
Language:English
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Summary:A Ge CMOS inverter and a ring oscillator composed of Si-passivated ultrathin-body (UTB, 10 nm) depletion-type poly-Ge p- and n-MISFETs with a single metal gate have been successfully fabricated and demonstrated for the first time. A low Ioff coming from a depletion-type thin channel, a thermally stable gate stack interface against interlayer deposition for interconnection due to Si passivation, and a large Vth difference between p- and n-MISFETs originating from Si passivation enabled poly-Ge CMOS IC operations.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.7.121302