Nonvolatile bipolar resistive switching behavior of epitaxial NdFeO3-PbTiO3 thin films grown on Nb:SrTiO3(001) substrate

Epitaxial NdFeO3-PbTiO3 (NFPTO) thin films were fabricated on Nb-SrTiO3(100) (NSTO) substrates of about 300 nm thickness by a sol-gel process. Nonvolatile bipolar resistive switching has been observed in the Pt/NFPTO/NSTO structure. The resistance ratio between the high-resistance state and the low-...

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Bibliographic Details
Published in:Applied physics express 2015-05, Vol.8 (5)
Main Authors: Gao, Cunxu, Zhang, Peng, Xu, Benhua, Chen, Zhendong, Qi, Lin, Zhang, Chao, Dong, Chunhui, Jiang, Changjun, Liu, Qingfang, Xue, Desheng
Format: Article
Language:English
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Summary:Epitaxial NdFeO3-PbTiO3 (NFPTO) thin films were fabricated on Nb-SrTiO3(100) (NSTO) substrates of about 300 nm thickness by a sol-gel process. Nonvolatile bipolar resistive switching has been observed in the Pt/NFPTO/NSTO structure. The resistance ratio between the high-resistance state and the low-resistance state is about one order of magnitude. After degenerating for several minutes, each memory state is stably maintained and no further degradation occurs over 15000 s. X-ray photoelectron spectroscopy results suggest that the oxygen vacancies acting as trapping centers in the films play a significant role in the resistive switching mechanisms. Analysis of the current-voltage relationship demonstrates that the trap-controlled space-charge-limited current mechanism is of considerable importance to the resistance switching.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.8.051102