Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate

We report on a study of AlGaN/GaN heterostructure lateral Schottky barrier diodes (L-SBDs) grown on a bulk GaN substrate. The L-SBDs exhibited an ultralow reverse leakage current below 10−6 A/cm2 without employing any extra treatments, which was over 4 orders of magnitude lower than that of a refere...

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Bibliographic Details
Published in:Applied physics express 2016-03, Vol.9 (3), p.31001
Main Authors: Lu, Xing, Liu, Chao, Jiang, Huaxing, Zou, Xinbo, Zhang, Anping, Lau, Kei May
Format: Article
Language:English
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Summary:We report on a study of AlGaN/GaN heterostructure lateral Schottky barrier diodes (L-SBDs) grown on a bulk GaN substrate. The L-SBDs exhibited an ultralow reverse leakage current below 10−6 A/cm2 without employing any extra treatments, which was over 4 orders of magnitude lower than that of a reference device on a sapphire substrate. The superior performance was attributed to the high crystalline quality of the heterostructure achieved by homoepitaxy. The comparison also revealed that the absence of high-density trap states in the homoepitaxial L-SBD grown on the bulk GaN substrate played a key role in achieving a low reverse leakage current.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.9.031001