In situ observation of electrical property of thin-layer black phosphorus based on dry transfer method

The electrical property of thin-layer black phosphorus (BP) was explored using a simple dry transfer method, which greatly reduced the fabrication time to carry out electrical measurement starting from an initial state with little degradation. As a result, the as-prepared BP field-effect transistor...

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Bibliographic Details
Published in:Applied physics express 2016-04, Vol.9 (4), p.45202
Main Authors: Xin, Xin, Zhao, Hai-Ming, Cao, Hui-Wen, Tian, He, Yang, Yi, Ren, Tian-Ling
Format: Article
Language:English
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Summary:The electrical property of thin-layer black phosphorus (BP) was explored using a simple dry transfer method, which greatly reduced the fabrication time to carry out electrical measurement starting from an initial state with little degradation. As a result, the as-prepared BP field-effect transistor (FET) exhibited a high on/off ratio exceeding 104 and a high hole mobility of 380 cm2/(V·s). The time-dependent electrical property of BP indicated a declining and recovering process, caused by the degradation and doping effect. Finally, it was demonstrated that the degradation and large hysteresis of BP FET could be modified by covering a thin Al2O3 layer.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.9.045202