N-type conduction in SnS by anion substitution with Cl

Relatively nontoxic, earth-abundant Cl was incorporated into n-type SnS as a dopant. The existence of impurity phases was carefully identified in Sn(S1−x−yClx)-dense ceramics. The highest electron mobility (8.3 cm2 V−1 s−1) in n-type conduction was achieved in samples with x ≥ 0.005. Cl concentratio...

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Bibliographic Details
Published in:Applied physics express 2016-05, Vol.9 (5), p.51201
Main Authors: Yanagi, Hiroshi, Iguchi, Yuki, Sugiyama, Taiki, Kamiya, Toshio, Hosono, Hideo
Format: Article
Language:English
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Summary:Relatively nontoxic, earth-abundant Cl was incorporated into n-type SnS as a dopant. The existence of impurity phases was carefully identified in Sn(S1−x−yClx)-dense ceramics. The highest electron mobility (8.3 cm2 V−1 s−1) in n-type conduction was achieved in samples with x ≥ 0.005. Cl concentration is critical for conduction-type conversion, whereas carrier density and electron mobility are determined by sulfur-site deficiency. Carrier transport is explained by grain boundary potential barrier scattering in undoped p-type samples and by ionized impurity scattering in Cl-doped n-type samples.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.9.051201