Electron microscopy analysis of microstructure of postannealed aluminum nitride template

The microstructure of an AlN template after high-temperature annealing was investigated by transmission electron microscopy (TEM). The AlN template was prepared by depositing an AlN layer of about 200 nm thickness on a sapphire (0001) substrate by metal-organic vapor phase epitaxy. The AlN template...

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Bibliographic Details
Published in:Applied physics express 2016-06, Vol.9 (6), p.65502
Main Authors: Kaur, Jesbains, Kuwano, Noriyuki, Jamaludin, Khairur Rijal, Mitsuhara, Masatoshi, Saito, Hikaru, Hata, Satoshi, Suzuki, Shuhei, Miyake, Hideto, Hiramatsu, Kazumasa, Fukuyama, Hiroyuki
Format: Article
Language:English
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Summary:The microstructure of an AlN template after high-temperature annealing was investigated by transmission electron microscopy (TEM). The AlN template was prepared by depositing an AlN layer of about 200 nm thickness on a sapphire (0001) substrate by metal-organic vapor phase epitaxy. The AlN template was annealed under (N2 + CO) atmosphere at 1500-1650 °C. TEM characterization was conducted to investigate the microstructural evolution, revealing that the postannealed AlN has a two-layer structure, the upper and lower layers of which exhibit Al and N polarities, respectively. It has been confirmed that postannealing is an effective treatment for controlling the microstructure.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.9.065502