Epitaxial growth of monolayer MoSe2 on GaAs

We realized 1-4 monolayer MoSe2 films on Se-terminated GaAs (111)B 2-in. substrates by molecular beam epitaxy. Atomically flat GaAs wafers were prepared by the migration-enhanced epitaxy method, and MoSe2 layers were successfully grown on Se-terminated GaAs (111)B surfaces with layer-number control...

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Bibliographic Details
Published in:Applied physics express 2016-11, Vol.9 (11)
Main Authors: Onomitsu, Koji, Krajewska, Aleksandra, Neufeld, Ryan A. E., Maeda, Fumihiko, Kumakura, Kazuhide, Yamamoto, Hideki
Format: Article
Language:English
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Summary:We realized 1-4 monolayer MoSe2 films on Se-terminated GaAs (111)B 2-in. substrates by molecular beam epitaxy. Atomically flat GaAs wafers were prepared by the migration-enhanced epitaxy method, and MoSe2 layers were successfully grown on Se-terminated GaAs (111)B surfaces with layer-number control over the entire wafer area. The obtained MoSe2 crystal is well aligned on the GaAs (111)B surface. The quasi-van der Waals gap formed between a Se-terminated GaAs (111)B surface and MoSe2 was directly observed with a scanning transmission electron microscope. All A1g Raman peaks from 93 points on 2-in. monolayer MoSe2 are distributed within 0.25 cm−1, indicating excellent spatial uniformity.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.9.115501