Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/f noise measurements

In this study, the impact of aluminum ion implantation on 1/f noise characteristics and random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) was investigated. Aluminum ion implantation (Al I/I) into TiN/HfO2/SiO2 was implement...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2014-04, Vol.53 (4S), p.4
Main Authors: Kao, Tsung-Hsien, Wu, San-Lein, Tsai, Kai-Shiang, Fang, Yean-Kuen, Lai, Chien-Ming, Hsu, Chia-Wei, Chen, Yi-Wen, Cheng, Osbert, Chang, Shoou-Jinn
Format: Article
Language:English
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Summary:In this study, the impact of aluminum ion implantation on 1/f noise characteristics and random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) was investigated. Aluminum ion implantation (Al I/I) into TiN/HfO2/SiO2 was implemented to tune an effective work function (EWF) in pMOSFETs without EOT increase complicated processes. RTN and 1/f results revealed that regardless of the implanted dose, HK/MG devices with Al I/I exhibit lower slow oxide trap densities than the control devices, which are responsible for the reduced trap position (xt) from the SiO2 interfacial layer (IL)/Si interface. For the HK/MG devices with different implanted doses, no significant differences in trap properties were observed.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.04EC14