Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/f noise measurements

In this study, the impact of aluminum ion implantation on 1/f noise characteristics and random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) was investigated. Aluminum ion implantation (Al I/I) into TiN/HfO2/SiO2 was implement...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2014-04, Vol.53 (4S), p.4
Main Authors: Kao, Tsung-Hsien, Wu, San-Lein, Tsai, Kai-Shiang, Fang, Yean-Kuen, Lai, Chien-Ming, Hsu, Chia-Wei, Chen, Yi-Wen, Cheng, Osbert, Chang, Shoou-Jinn
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c308t-2fb2b3bdd202146543b9913d37665bd2ff8d934dacb80c1b6fe5afdd31194efa3
cites cdi_FETCH-LOGICAL-c308t-2fb2b3bdd202146543b9913d37665bd2ff8d934dacb80c1b6fe5afdd31194efa3
container_end_page
container_issue 4S
container_start_page 4
container_title Japanese Journal of Applied Physics
container_volume 53
creator Kao, Tsung-Hsien
Wu, San-Lein
Tsai, Kai-Shiang
Fang, Yean-Kuen
Lai, Chien-Ming
Hsu, Chia-Wei
Chen, Yi-Wen
Cheng, Osbert
Chang, Shoou-Jinn
description In this study, the impact of aluminum ion implantation on 1/f noise characteristics and random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) was investigated. Aluminum ion implantation (Al I/I) into TiN/HfO2/SiO2 was implemented to tune an effective work function (EWF) in pMOSFETs without EOT increase complicated processes. RTN and 1/f results revealed that regardless of the implanted dose, HK/MG devices with Al I/I exhibit lower slow oxide trap densities than the control devices, which are responsible for the reduced trap position (xt) from the SiO2 interfacial layer (IL)/Si interface. For the HK/MG devices with different implanted doses, no significant differences in trap properties were observed.
doi_str_mv 10.7567/JJAP.53.04EC14
format article
fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_iop_journals_10_7567_JJAP_53_04EC14</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>SS13003</sourcerecordid><originalsourceid>FETCH-LOGICAL-c308t-2fb2b3bdd202146543b9913d37665bd2ff8d934dacb80c1b6fe5afdd31194efa3</originalsourceid><addsrcrecordid>eNp1UD1PwzAUtBBIlMLK7BWkpHbsJM1YVXxVRUVqmS0nthuHfFi2K9SRf46jdoTp6Z7u7t07AO4xivM0y2er1eIjTkmM6NMS0wswwYTmEUVZegkmCCU4okWSXIMb55oAs5TiCfjZWW6gsYOR1mvp4KBgrfd19DXrpOct3HMvoXnfbJ-fdg5-a19D3h463R86qIce6s60vPfcj6A8Qst7MXTQy1bug3UN-0E7CcMW4pk6o05yd7Cyk713t-BK8dbJu_Ocgs9wavkarTcvb8vFOqoImvsoUWVSklKIJHxCQ3hSFgUmguRZlpYiUWouCkIFr8o5qnCZKZlyJQTBuKBScTIF8cm3soNzVipmrO64PTKM2FggGwtkKWGnAoPg4STQg2HNcLB9iMeahpuRRLdnHjNCBe7jH9x_jH8B-DyBlQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/f noise measurements</title><source>Institute of Physics</source><creator>Kao, Tsung-Hsien ; Wu, San-Lein ; Tsai, Kai-Shiang ; Fang, Yean-Kuen ; Lai, Chien-Ming ; Hsu, Chia-Wei ; Chen, Yi-Wen ; Cheng, Osbert ; Chang, Shoou-Jinn</creator><creatorcontrib>Kao, Tsung-Hsien ; Wu, San-Lein ; Tsai, Kai-Shiang ; Fang, Yean-Kuen ; Lai, Chien-Ming ; Hsu, Chia-Wei ; Chen, Yi-Wen ; Cheng, Osbert ; Chang, Shoou-Jinn</creatorcontrib><description>In this study, the impact of aluminum ion implantation on 1/f noise characteristics and random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) was investigated. Aluminum ion implantation (Al I/I) into TiN/HfO2/SiO2 was implemented to tune an effective work function (EWF) in pMOSFETs without EOT increase complicated processes. RTN and 1/f results revealed that regardless of the implanted dose, HK/MG devices with Al I/I exhibit lower slow oxide trap densities than the control devices, which are responsible for the reduced trap position (xt) from the SiO2 interfacial layer (IL)/Si interface. For the HK/MG devices with different implanted doses, no significant differences in trap properties were observed.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.53.04EC14</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><ispartof>Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4</ispartof><rights>2014 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c308t-2fb2b3bdd202146543b9913d37665bd2ff8d934dacb80c1b6fe5afdd31194efa3</citedby><cites>FETCH-LOGICAL-c308t-2fb2b3bdd202146543b9913d37665bd2ff8d934dacb80c1b6fe5afdd31194efa3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.53.04EC14/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,38845,53815</link.rule.ids></links><search><creatorcontrib>Kao, Tsung-Hsien</creatorcontrib><creatorcontrib>Wu, San-Lein</creatorcontrib><creatorcontrib>Tsai, Kai-Shiang</creatorcontrib><creatorcontrib>Fang, Yean-Kuen</creatorcontrib><creatorcontrib>Lai, Chien-Ming</creatorcontrib><creatorcontrib>Hsu, Chia-Wei</creatorcontrib><creatorcontrib>Chen, Yi-Wen</creatorcontrib><creatorcontrib>Cheng, Osbert</creatorcontrib><creatorcontrib>Chang, Shoou-Jinn</creatorcontrib><title>Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/f noise measurements</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>In this study, the impact of aluminum ion implantation on 1/f noise characteristics and random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) was investigated. Aluminum ion implantation (Al I/I) into TiN/HfO2/SiO2 was implemented to tune an effective work function (EWF) in pMOSFETs without EOT increase complicated processes. RTN and 1/f results revealed that regardless of the implanted dose, HK/MG devices with Al I/I exhibit lower slow oxide trap densities than the control devices, which are responsible for the reduced trap position (xt) from the SiO2 interfacial layer (IL)/Si interface. For the HK/MG devices with different implanted doses, no significant differences in trap properties were observed.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp1UD1PwzAUtBBIlMLK7BWkpHbsJM1YVXxVRUVqmS0nthuHfFi2K9SRf46jdoTp6Z7u7t07AO4xivM0y2er1eIjTkmM6NMS0wswwYTmEUVZegkmCCU4okWSXIMb55oAs5TiCfjZWW6gsYOR1mvp4KBgrfd19DXrpOct3HMvoXnfbJ-fdg5-a19D3h463R86qIce6s60vPfcj6A8Qst7MXTQy1bug3UN-0E7CcMW4pk6o05yd7Cyk713t-BK8dbJu_Ocgs9wavkarTcvb8vFOqoImvsoUWVSklKIJHxCQ3hSFgUmguRZlpYiUWouCkIFr8o5qnCZKZlyJQTBuKBScTIF8cm3soNzVipmrO64PTKM2FggGwtkKWGnAoPg4STQg2HNcLB9iMeahpuRRLdnHjNCBe7jH9x_jH8B-DyBlQ</recordid><startdate>20140401</startdate><enddate>20140401</enddate><creator>Kao, Tsung-Hsien</creator><creator>Wu, San-Lein</creator><creator>Tsai, Kai-Shiang</creator><creator>Fang, Yean-Kuen</creator><creator>Lai, Chien-Ming</creator><creator>Hsu, Chia-Wei</creator><creator>Chen, Yi-Wen</creator><creator>Cheng, Osbert</creator><creator>Chang, Shoou-Jinn</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20140401</creationdate><title>Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/f noise measurements</title><author>Kao, Tsung-Hsien ; Wu, San-Lein ; Tsai, Kai-Shiang ; Fang, Yean-Kuen ; Lai, Chien-Ming ; Hsu, Chia-Wei ; Chen, Yi-Wen ; Cheng, Osbert ; Chang, Shoou-Jinn</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c308t-2fb2b3bdd202146543b9913d37665bd2ff8d934dacb80c1b6fe5afdd31194efa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kao, Tsung-Hsien</creatorcontrib><creatorcontrib>Wu, San-Lein</creatorcontrib><creatorcontrib>Tsai, Kai-Shiang</creatorcontrib><creatorcontrib>Fang, Yean-Kuen</creatorcontrib><creatorcontrib>Lai, Chien-Ming</creatorcontrib><creatorcontrib>Hsu, Chia-Wei</creatorcontrib><creatorcontrib>Chen, Yi-Wen</creatorcontrib><creatorcontrib>Cheng, Osbert</creatorcontrib><creatorcontrib>Chang, Shoou-Jinn</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kao, Tsung-Hsien</au><au>Wu, San-Lein</au><au>Tsai, Kai-Shiang</au><au>Fang, Yean-Kuen</au><au>Lai, Chien-Ming</au><au>Hsu, Chia-Wei</au><au>Chen, Yi-Wen</au><au>Cheng, Osbert</au><au>Chang, Shoou-Jinn</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/f noise measurements</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2014-04-01</date><risdate>2014</risdate><volume>53</volume><issue>4S</issue><spage>4</spage><pages>4-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>In this study, the impact of aluminum ion implantation on 1/f noise characteristics and random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) was investigated. Aluminum ion implantation (Al I/I) into TiN/HfO2/SiO2 was implemented to tune an effective work function (EWF) in pMOSFETs without EOT increase complicated processes. RTN and 1/f results revealed that regardless of the implanted dose, HK/MG devices with Al I/I exhibit lower slow oxide trap densities than the control devices, which are responsible for the reduced trap position (xt) from the SiO2 interfacial layer (IL)/Si interface. For the HK/MG devices with different implanted doses, no significant differences in trap properties were observed.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.53.04EC14</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4
issn 0021-4922
1347-4065
language eng
recordid cdi_iop_journals_10_7567_JJAP_53_04EC14
source Institute of Physics
title Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/f noise measurements
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T10%3A07%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Trap%20properties%20of%20high-k/metal%20gate%20pMOSFETs%20with%20aluminum%20ion%20implantation%20by%20random%20telegraph%20noise%20and%201/f%20noise%20measurements&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Kao,%20Tsung-Hsien&rft.date=2014-04-01&rft.volume=53&rft.issue=4S&rft.spage=4&rft.pages=4-&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPB6&rft_id=info:doi/10.7567/JJAP.53.04EC14&rft_dat=%3Ciop_cross%3ESS13003%3C/iop_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c308t-2fb2b3bdd202146543b9913d37665bd2ff8d934dacb80c1b6fe5afdd31194efa3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true