Effects of various surface treatments on gate leakage, subthreshold slope, and current collapse in AlGaN/GaN high-electron-mobility transistors

The reduction in the gate leakage current and the improvement in subthreshold characteristics and current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) with various surface treatments were investigated. We applied wet treatment, digital etching (O2 or N2O), or plasma treatment (CF...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2014-04, Vol.53 (4S), p.4-1-04EF10-5
Main Authors: Lee, Neung-Hee, Lee, Minseong, Choi, Woojin, Kim, Donghwan, Jeon, Namcheol, Choi, Seonhong, Seo, Kwang-Seok
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Collapse
Gallium nitrides
Gates
Leakage current
Semiconductor devices
Slopes
Surface treatment
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The reduction in the gate leakage current and the improvement in subthreshold characteristics and current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) with various surface treatments were investigated. We applied wet treatment, digital etching (O2 or N2O), or plasma treatment (CF4 or SF6) before SiNx passivation. Among these treatments, SF6 plasma treatment suppressed gate leakage current, reduced subthreshold slope, and improved pulsed current-voltage (I-V) characteristics most effectively.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.04EF10