Effects of Nb2O5 and SiO2 buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass

We have investigated the electrical properties of indium tin oxide (ITO) thin films deposited on chemically strengthened glass (CSG) substrate by room-temperature ionized physical vapor deposition (IPVD). The ITO thin film on the CSG substrate shows a higher sheet resistance after high-temperature a...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2014-08, Vol.53 (8S3)
Main Authors: Hong, Chan-Hwa, Shin, Jae-Heon, Park, Nae-Man, Kim, Kyung-Hyun, Kim, Bo-Sul, Kwak, Joon-Seop, Ju, Byeong-Kwon, Cheong, Woo-Seok
Format: Article
Language:English
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Summary:We have investigated the electrical properties of indium tin oxide (ITO) thin films deposited on chemically strengthened glass (CSG) substrate by room-temperature ionized physical vapor deposition (IPVD). The ITO thin film on the CSG substrate shows a higher sheet resistance after high-temperature anneal process (>200 °C) possibly due to the out-diffusion of potassium ions (K+) from the CSG. We have improved the electrical properties of the ITO thin film by inserting Nb2O5/SiO2 buffer layers between the ITO layer and the CSG substrate. As a result, a protected and index-matched 30-nm-thick ITO thin film with sheet resistance less than 120 Ω/sq and optical transmittance higher than 90% (at 550 nm) has been achieved.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.08NG01