A new Cu(GeNx) alloy film for industrial applications

In this study, a copper alloy [Cu(GeNx)] film is developed for industrial applications by cosputtering Cu and Ge targets on a barrierless Si substrate within a vacuum chamber sparsely filled with N2 gas. Through extensive tests conducted in this study, the alloy film shows good thermal stability and...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2014-11, Vol.53 (11S), p.11-1-11RC05-7
Main Author: Lin, Chon-Hsin
Format: Article
Language:English
Subjects:
Alloying additive
APPLICATIONS
CONNECTORS (ELECTRICAL)
Copper
COPPER ALLOYS (40 TO 99.3 CU)
Copper base alloys
Diffusion layers
DUSTS
INDUSTRIAL APPLICATIONS
METALLIZING (FOR PLATING)
Metallurgy
Solderability
SOLDERABILITY VALUES
SOLDERING ALLOYS
Solders
Wetting
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Summary:In this study, a copper alloy [Cu(GeNx)] film is developed for industrial applications by cosputtering Cu and Ge targets on a barrierless Si substrate within a vacuum chamber sparsely filled with N2 gas. Through extensive tests conducted in this study, the alloy film shows good thermal stability and adhesion to the substrate with no noticeable interactions between the film and the substrate after annealing at 720 °C for 1 h. The new Cu(GeNx) alloy film also renders adequate wetting for solders, shows good solderability, and has a dissolution rate lower than pure Cu by at least one order of magnitude, in addition to having a comparable consumption rate to Ni. The alloy film seems suitable for industrial applications in, e.g., barrierless Si metallization, interconnect manufacture and, the replacement of the wetting and diffusion layers for flip-chip solder joints in conventional metallurgy.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.11RC05