Gate-to-source voltage response in high-sensitivity amorphous InGaZnO4 thin-film transistor pH sensors

In this paper, we discuss our top-gate-effect-based high-sensitivity amorphous InGaZnO4 thin-film transistor (a-InGaZnO TFT) pH sensor from the viewpoint of gate-to-source voltage (Vgs) response to small pH step variations. The a-InGaZnO TFT pH sensor, whose sensitivity is as high as 450 mV/pH, show...

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Published in:Japanese Journal of Applied Physics 2015-07, Vol.54 (7)
Main Authors: Takechi, Kazushige, Iwamatsu, Shinnosuke, Konno, Shunsuke, Yahagi, Toru, Abe, Yutaka, Katoh, Mutsuto, Tanabe, Hiroshi
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container_title Japanese Journal of Applied Physics
container_volume 54
creator Takechi, Kazushige
Iwamatsu, Shinnosuke
Konno, Shunsuke
Yahagi, Toru
Abe, Yutaka
Katoh, Mutsuto
Tanabe, Hiroshi
description In this paper, we discuss our top-gate-effect-based high-sensitivity amorphous InGaZnO4 thin-film transistor (a-InGaZnO TFT) pH sensor from the viewpoint of gate-to-source voltage (Vgs) response to small pH step variations. The a-InGaZnO TFT pH sensor, whose sensitivity is as high as 450 mV/pH, shows Vgs response to a pH step change of 0.1 with negligible hysteresis and good linearity. Because the high sensitivity is based on the enhancement of parallel shift in the transfer characteristics through the top-gate effect, the Vgs range for detecting is randomly selected.
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title Gate-to-source voltage response in high-sensitivity amorphous InGaZnO4 thin-film transistor pH sensors
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