High-efficiency thin-film silicon solar cells realized by integrating stable a-Si:H absorbers into improved device design

We report that thin-film silicon solar cells exhibiting high stabilized efficiencies can be obtained by depositing hydrogenated amorphous silicon (a-Si:H) absorbers using triode-type plasma-enhanced chemical vapor deposition. The improved light-soaking stability and performance of solar cells are al...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2015-08, Vol.54 (8S1), p.8
Main Authors: Matsui, Takuya, Maejima, Keigou, Bidiville, Adrien, Sai, Hitoshi, Koida, Takashi, Suezaki, Takashi, Matsumoto, Mitsuhiro, Saito, Kimihiko, Yoshida, Isao, Kondo, Michio
Format: Article
Language:English
Subjects:
Design improvements
Devices
Illumination
Photovoltaic cells
Silicon
Silicon substrates
Solar cells
Thin films
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Summary:We report that thin-film silicon solar cells exhibiting high stabilized efficiencies can be obtained by depositing hydrogenated amorphous silicon (a-Si:H) absorbers using triode-type plasma-enhanced chemical vapor deposition. The improved light-soaking stability and performance of solar cells are also realized by optimizing the device design, such as p and p-i buffer layers. As a result, we attain independently confirmed stabilized efficiencies of 10.1-10.2% for a-Si:H single-junction solar cells (absorber thickness: ti = 220-310 nm) and 12.69% for an a-Si:H (ti = 350 nm)/hydrogenated microcrystalline silicon (µc-Si:H) tandem solar cell fabricated using textured SnO2 and ZnO substrates, respectively. The relative efficiency degradations of these solar cells are ∼10 and 3%, respectively, under 1 sun illumination at 50 °C for 1000 h.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.54.08KB10