S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode

Five silicon (Si) p++-n−-n++ samples were grown at various doping concentrations (1.0 × 1017-2.2 × 1017 cm−3) in an n− layer by using the reduced-pressure CVD technique. By using these samples, 30 × 2 µm2 single-drift (SD) impact-ionization avalanche transit-time (IMPATT) diodes were processed with...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2016-04, Vol.55 (4S), p.4
Main Authors: Zhang, Wogong, Yamamoto, Yuji, Oehme, Michael, Matthies, Klaus, Raju, Ashraful I., Srinivasan, V. S. Senthil, Körner, Roman, Gollhofer, Martin, Bechler, Stefan, Funk, Hannes, Tillack, Bernd, Kasper, Erich, Schulze, Jörg
Format: Article
Language:English
Subjects:
Amplification
Avalanche diodes
Circuits
Depletion
Diodes
Mathematical models
Oscillators
Silicon
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Summary:Five silicon (Si) p++-n−-n++ samples were grown at various doping concentrations (1.0 × 1017-2.2 × 1017 cm−3) in an n− layer by using the reduced-pressure CVD technique. By using these samples, 30 × 2 µm2 single-drift (SD) impact-ionization avalanche transit-time (IMPATT) diodes were processed with Si-based monolithic millimeter-wave integrated circuit (SIMMWIC) technology.1,2) The samples within a small process window exhibited a large negative differential resistance at approximately the avalanche frequency, as confirmed by small-signal S-parameter characterization. A model based on depletion width was given to explain the conditions for the appearance of the negative differential IMPATT resistance, which is the basis of millimeter-wave amplifier and oscillator applications. Furthermore, a measurement-based small-signal lumped-element model was established to describe the IMPATT functionality from the circuit component aspect. This lumped-element model shows a negative differential resistance within a well-defined range in the given element parameters, which can explain the experimental observations.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.55.04EF03