Enhancement of Au-induced lateral crystallization in electron-irradiated amorphous Ge on SiO2

We have investigated the acceleration energy (0.5-2.0 MeV)-modulated electron irradiation effect of Au-induced lateral crystallization for amorphous Ge on SiO2. As a result, low-energy electron (≤1.0 MeV) irradiation was not effective for Au-induced lateral crystallization. On the other hand, when h...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2016-03, Vol.55 (4S)
Main Authors: Moto, Kenta, Sakiyama, Shin, Okamoto, Hayato, Hara, Hideyuki, Nishimura, Hiroto, Takakura, Kenichiro, Tsunoda, Isao
Format: Article
Language:eng ; jpn
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Summary:We have investigated the acceleration energy (0.5-2.0 MeV)-modulated electron irradiation effect of Au-induced lateral crystallization for amorphous Ge on SiO2. As a result, low-energy electron (≤1.0 MeV) irradiation was not effective for Au-induced lateral crystallization. On the other hand, when high-energy electron (2.0 MeV) irradiation was utilized, the lateral growth velocity was significantly enhanced (∼1.8 times). We have confirmed that the Au-induced lateral growth is enhanced by electron irradiation, which is due to the introduction of point defects into amorphous Ge, allowing the easy diffusion of Au atoms.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.55.04EJ06