GaNSb alloys grown with H2 and N2 carrier gases

• Published in: Japanese Journal of Applied Physics 2016-05, Vol.55 (5S)
• Main Authors: Komori, Daisuke, Takarabe, Kaku, Takeuchi, Tetsuya, Miyajima, Takao, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.55.05FD01

We grew GaNSb layers with H2 and N2 carrier gases by metalorganic vapor phase epitaxy. We estimated the GaSb molar fraction in a GaNSb layer grown with H2 by Rutherford backscattering spectroscopy. A 0.8% GaSb molar fraction was obtained, which was consistent with the value obtained by secondary ion mass spectroscopy. We correlated the obtained GaSb molar fraction with the c-axis lattice constant of GaSb estimated from an X-ray diffraction pattern. We investigated GaSb molar fractions in GaNSb grown with H2 and N2 at various growth temperatures. While GaSb molar fractions in the H2 case showed a plateau at 0.8% at less than 800 °C, those in the N2 case increased to 1.1% with a decrease in the growth temperature to 750 °C. Sb incorporation into GaNSb could be further improved by carrying out growth under N2, similar to the case of GaInN growth.