Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence

We suggest a novel technique for the evaluation of the recombination coefficients corresponding to Shockley-Read-Hall, radiative, and Auger recombination that occur in InGaN/GaN-based light-emitting diodes (LEDs). This technique combines the measurement of the LED efficiency as a function of LED dri...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2016-05, Vol.55 (5S), p.5
Main Authors: Nippert, Felix, Karpov, Sergey, Pietzonka, Ines, Galler, Bastian, Wilm, Alexander, Kure, Thomas, Nenstiel, Christian, Callsen, Gordon, Straßburg, Martin, Lugauer, Hans-Jürgen, Hoffmann, Axel
Format: Article
Language:English
Subjects:
Augers
Constraining
Gain
Indium gallium nitrides
Light-emitting diodes
Photoluminescence
Quantum wells
Recombination coefficient
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Summary:We suggest a novel technique for the evaluation of the recombination coefficients corresponding to Shockley-Read-Hall, radiative, and Auger recombination that occur in InGaN/GaN-based light-emitting diodes (LEDs). This technique combines the measurement of the LED efficiency as a function of LED drive current with a small-signal time-resolved photoluminescence measurement of the differential carrier life time (DLT). Using the relationships between the efficiency and DLT following from the empirical ABC-model, one can evaluate all three recombination coefficients. The suggested technique is applied to a number of single- and multiple-quantum well LEDs to gain a deeper insight into the mechanisms ultimately limiting their efficiency.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.55.05FJ01