Study on the contact resistance of various metals (Au, Ti, and Sb) on Bi-Te and Sb-Te thermoelectric films

In this study, we explore various electrode materials (Au, Ti, and Sb) for use as contact materials on Bi2Te3 and Sb2Te3 thermoelectric films. Using the transmission line method (TLM), we measured the specific resistivity of the contacts, which showed that Au has the lowest contact resistivity for b...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2016-06, Vol.55 (6S3), p.6-06JE03
Main Authors: Yong, Ho, Na, Sekwon, Gang, Jun-Gu, Shin, HaeSun, Jeon, Seong-Jae, Hyun, SeungMin, Lee, Hoo-Jeong
Format: Article
Language:English
Subjects:
Annealing
Antimony
Carrier transport
Contact
Contact resistance
Electrical resistivity
Thermoelectricity
Titanium
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Summary:In this study, we explore various electrode materials (Au, Ti, and Sb) for use as contact materials on Bi2Te3 and Sb2Te3 thermoelectric films. Using the transmission line method (TLM), we measured the specific resistivity of the contacts, which showed that Au has the lowest contact resistivity for both the thermoelectric films (after annealing): 2.7 × 10−10 Ω m2 for Bi2Te3 and 2.9 × 10−11 Ω m2 for Sb2Te3. The specific contact resistivity data suggest that the dominant factor for the contact properties is interface states. After annealing, the contact resistivity does not change much for the Bi2Te3 contacts while it drops greatly for the Sb2Te3 ones. Analysis of the carrier transport mechanism across the contacts discloses that changes in the carrier concentration in the thermoelectric films after annealing are responsible for the different behaviors.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.55.06JE03