Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

The recent progress and development of corundum-structured III-oxide semiconductors are reviewed. They allow bandgap engineering from 3.7 to ∼9 eV and function engineering, leading to highly durable electronic devices and deep ultraviolet optical devices as well as multifunctional devices. Mist chem...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2016-12, Vol.55 (12), p.1202
Main Authors: Fujita, Shizuo, Oda, Masaya, Kaneko, Kentaro, Hitora, Toshimi
Format: Article
Language:English
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Summary:The recent progress and development of corundum-structured III-oxide semiconductors are reviewed. They allow bandgap engineering from 3.7 to ∼9 eV and function engineering, leading to highly durable electronic devices and deep ultraviolet optical devices as well as multifunctional devices. Mist chemical vapor deposition can be a simple and safe growth technology and is advantageous for reducing energy and cost for the growth. This is favorable for the wide commercial use of devices at low cost. The III-oxide semiconductors are promising candidates for new devices contributing to sustainable social, economic, and technological development for the future.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.55.1202A3