Self-ordering of InAs nanostructures on (631)A/B GaAs substrates

The high order self-organization of quantum dots is demonstrated in the growth of InAs on a GaAs(631)-oriented crystallographic plane. The unidimensional ordering of the quantum dots (QDs) strongly depends on the As flux beam equivalent pressure (PAs) and the cation/anion terminated surface, i.e., A...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-02, Vol.57 (2), p.25201
Main Authors: Eugenio-López, Eric, Mercado-Ornelas, Christian Alejandro, Patil, Pallavi Kisan, Cortes-Mestizo, Irving Eduardo, Espinoza-Figueroa, José Ángel, Gorbatchev, Andrei Yu, Shimomura, Satoshi, Espinosa-Vega, Leticia Ithsmel, Méndez-García, Víctor Hugo
Format: Article
Language:English
Subjects:
Buffer layers
Crystallography
Indium arsenides
Misalignment
Optical properties
Photoluminescence
Quantum dots
Self-assembly
Size distribution
Substrates
Waviness
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Summary:The high order self-organization of quantum dots is demonstrated in the growth of InAs on a GaAs(631)-oriented crystallographic plane. The unidimensional ordering of the quantum dots (QDs) strongly depends on the As flux beam equivalent pressure (PAs) and the cation/anion terminated surface, i.e., A- or B-type GaAs(631). The self-organization of QDs occurs for both surface types along , while the QD shape and size distribution were found to be different for the self-assembly on the A- and B-type surfaces. In addition, the experiments showed that any misorientation from the (631) plane, which results from the buffer layer waviness, does not allow a high order of unidimensional arrangements of QDs. The optical properties were studied by photoluminescence spectroscopy, where good correspondence was obtained between the energy transitions and the size of the QDs.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.025201