Self-ordering of InAs nanostructures on (631)A/B GaAs substrates

• Published in: Japanese Journal of Applied Physics 2018-02, Vol.57 (2), p.25201
• Main Authors: Eugenio-López, Eric, Mercado-Ornelas, Christian Alejandro, Patil, Pallavi Kisan, Cortes-Mestizo, Irving Eduardo, Espinoza-Figueroa, José Ángel, Gorbatchev, Andrei Yu, Shimomura, Satoshi, Espinosa-Vega, Leticia Ithsmel, Méndez-García, Víctor Hugo
• Format: Article
• Language: English
• Subjects: Buffer layers; Crystallography; Indium arsenides; Misalignment; Optical properties; Photoluminescence; Quantum dots; Self-assembly; Size distribution; Substrates; Waviness
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.57.025201

The high order self-organization of quantum dots is demonstrated in the growth of InAs on a GaAs(631)-oriented crystallographic plane. The unidimensional ordering of the quantum dots (QDs) strongly depends on the As flux beam equivalent pressure (PAs) and the cation/anion terminated surface, i.e., A- or B-type GaAs(631). The self-organization of QDs occurs for both surface types along , while the QD shape and size distribution were found to be different for the self-assembly on the A- and B-type surfaces. In addition, the experiments showed that any misorientation from the (631) plane, which results from the buffer layer waviness, does not allow a high order of unidimensional arrangements of QDs. The optical properties were studied by photoluminescence spectroscopy, where good correspondence was obtained between the energy transitions and the size of the QDs.