Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks

A high-performance light-trapping structure for Si was fabricated with an etching margin of only ∼1 µm using Ge islands grown by gas-source molecular beam epitaxy as etching masks. KOH solution containing isopropyl alcohol and HF + H2O2 + CH3COOH mixed solution were used as etchants. The reflectance...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-08, Vol.57 (8S3), p.8
Main Authors: Ota, Yushi, Hombe, Atsushi, Nezasa, Ryota, Yurasov, Dmitry, Novikov, Alexey, Shaleev, Mikhail, Baidakova, Natalie, Morozova, Elena, Kurokawa, Yasuyoshi, Usami, Noritaka
Format: Article
Language:English
Subjects:
Circuits
Epitaxial growth
Etchants
Etching
Hydrogen peroxide
Indium tin oxides
Islands
Isopropanol
Masks
Molecular beam epitaxy
Photovoltaic cells
Reflectance
Short circuit currents
Silicon
Solar cells
Trapping
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A high-performance light-trapping structure for Si was fabricated with an etching margin of only ∼1 µm using Ge islands grown by gas-source molecular beam epitaxy as etching masks. KOH solution containing isopropyl alcohol and HF + H2O2 + CH3COOH mixed solution were used as etchants. The reflectance of the structure was shown to be comparable to that of a conventional pyramid texture, which requires a larger etching margin of ∼10 µm. In addition, a potential short-circuit current density (p-Jsc) of 42.3 mA/cm2 was obtained for the sample after the deposition of indium tin oxide, which confirms that the light-trapping structure is applicable to crystalline Si solar cells with thinner wafers.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.08RB04