Low-temperature silicon oxidation using oxidizing radicals produced by catalytic decomposition of H2O/H2 on heated tungsten wire

The surface oxidization of Si(100) substrates by oxidizing species generated by the catalytic decomposition of H2O precursors on a heated tungsten wire in a mixed H2O/H2 gas atmosphere was investigated. The formation of Si oxide layers was realized at stage temperatures of not more than 350 °C. From...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-12, Vol.57 (12)
Main Authors: Katamune, Y ki, Negi, Takanobu, Tahara, Shinichi, Fukushima, Kazuya, Izumi, Akira
Format: Article
Language:English
Online Access:Get full text
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Summary:The surface oxidization of Si(100) substrates by oxidizing species generated by the catalytic decomposition of H2O precursors on a heated tungsten wire in a mixed H2O/H2 gas atmosphere was investigated. The formation of Si oxide layers was realized at stage temperatures of not more than 350 °C. From X-ray photoelectron spectroscopy measurements, their thicknesses were estimated to be 1-2 nm. In the tungsten wire temperature range from 1000 to 1450 °C, the oxidation of the wire was suppressed at H2O/H2 ratios of not more than 0.2%, which hardly caused tungsten contamination of the oxide layers.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.120301