Structural properties of ion beam synthesized iron - cobalt silicide

Surface and buried layers of ternary silicide were fabricated by implantation of iron and cobalt into (100) silicon wafers. For both the surface layers and the buried layers, two sets of samples were prepared. In the first set, cobalt was implanted first followed by iron and the implant order was re...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 1996-07, Vol.29 (7), p.1822-1830
Main Authors: Harry, M A, Curello, G, Finney, M S, Reeson, K J, Sealy, B J
Format: Article
Language:English
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Summary:Surface and buried layers of ternary silicide were fabricated by implantation of iron and cobalt into (100) silicon wafers. For both the surface layers and the buried layers, two sets of samples were prepared. In the first set, cobalt was implanted first followed by iron and the implant order was reversed in the second set. The physical properties of the synthesized layers were investigated by Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy and transmission electron microscopy. Results indicate that the implantation order is critical to the development of the synthesized layer. The surface layers with iron implanted first were noncrystalline and showed no significant improvement of crystallinity with increasing anneal temperature. However, the surface layers with cobalt implanted first exhibited a large improvement of crystal quality with increasing anneal temperature. The crystalline quality of the buried layers was also determined by the implant order in a similar way. (Abstract quotes from original text)
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/29/7/017