Graphene oxide thin film field effect transistors without reduction

Pristine graphene oxide thin film field effect transistors were fabricated on Si substrates without an additional reduction process. Graphene oxide with an optical band gap of 1.7 eV showed p-type semiconducting behaviour in air and ambipolarity under vacuum. The temperature dependence of conductanc...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2009-07, Vol.42 (13), p.135109-135109p5
Main Authors: Jin, Meihua, Jeong, Hae-Kyung, Yu, Woo Jong, Bae, Dong Jae, Kang, Bo Ram, Lee, Young Hee
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Pristine graphene oxide thin film field effect transistors were fabricated on Si substrates without an additional reduction process. Graphene oxide with an optical band gap of 1.7 eV showed p-type semiconducting behaviour in air and ambipolarity under vacuum. The temperature dependence of conductance confirmed these semiconducting characteristics. I-V characteristics were well fitted to a variable range hopping model with 2 + 3 dimensionality, in good contrast to the 2D fitting in the reduced graphene oxide.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/42/13/135109