Study of surface microstructure origin and evolution for GaAs grown on Ge/Si1−xGex/Si substrate

• Published in: Journal of physics. D, Applied physics Applied physics, 2009-02, Vol.42 (3), p.035303-035303 (4)
• Main Authors: Chen, K P, Yoon, S F, Ng, T K, Tanoto, H, Lew, K L, Dohrman, C L, Fitzgerald, E A
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/0022-3727/42/3/035303

The origin and evolution of surface microstructures in the GaAs layer grown on the Ge/Si1-xGex/Si substrate were studied. The characteristic surface microstructures are formed in pairs. By correlating the results from atomic force microscopy and cross-sectional transmission electron microscopy characterization, these paired surface microstructures are identified as {1 1 1} stacking faults that propagate at 54 deg with respect to the substrate surface. The stacking faults originate from the single-stepped GaAs/Ge heterointerface, as a consequence of in situ annealing of the Ge surface. The surface microstructure density becomes lower and the mean lateral size larger when the GaAs thickness is increased from 0.54 to 1.11 mum.