Band offsets at the epitaxial SrTiO3/SrZrO3 (0 0 1) heterojunction

The interface formation between SrTiO3 and SrZrO3 has been studied using in situ photoelectron spectroscopy. Epitaxial SrZrO3 thin films were grown on (0 0 1)-oriented SrTiO3 : Nb single crystals via pulsed-laser deposition. The epitaxial SrZrO3 growth was verified via x-ray diffraction and Cs-corre...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2012-02, Vol.45 (5), p.055303
Main Authors: Schafranek, R, Baniecki, J D, Ishii, M, Kotaka, Y, Yamanka, K, Kurihara, K
Format: Article
Language:English
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Summary:The interface formation between SrTiO3 and SrZrO3 has been studied using in situ photoelectron spectroscopy. Epitaxial SrZrO3 thin films were grown on (0 0 1)-oriented SrTiO3 : Nb single crystals via pulsed-laser deposition. The epitaxial SrZrO3 growth was verified via x-ray diffraction and Cs-corrected high angle annular dark field scanning transmission electron microscopy. A type I straddling configuration has been found for the interface analysed with a valence band and conduction band offset of 0.5 eV and 1.9 eV, respectively.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/45/5/055303