Behaviour of Oxygen-Implanted and Hydrogen-Implanted SiGe/Si Heterostructures

For SiGe-on-insulator fabrication, a 100 nm SiGe film with uniform germanium composition was grown on a Si(100) substrate using a molecular beam epitaxy system without a graded SiGe buffer layer. The samples were implanted by oxygen ions at an energy of 45 keV and a dose of 3X1017 cm-2, and annealed...

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Bibliographic Details
Published in:Chinese physics letters 2002-03, Vol.19 (3), p.413-415
Main Authors: Zheng-Hua, An, Miao, Zhang, Chuan-Ling, Men, Qin-Wo, Shen, Zi-Xin, Lin, Kai-Cheng, Li, Cheng-Lu, Lin
Format: Article
Language:English
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Summary:For SiGe-on-insulator fabrication, a 100 nm SiGe film with uniform germanium composition was grown on a Si(100) substrate using a molecular beam epitaxy system without a graded SiGe buffer layer. The samples were implanted by oxygen ions at an energy of 45 keV and a dose of 3X1017 cm-2, and annealed for five hours at 1250oC in flowing (Ar + 5% O2) atmosphere with a 100 nm oxide protective layer. The result indicates that a buried oxide layer was successfully formed at the interface of SiGe and Si on the substrate. Furthermore, hydrogen was implanted into SiGe at the energy of 62 keV and the dose of 6X1016 cm-2 to perform a blistering study, which confirmed the feasibility of H-induced layer splitting in SiGe layer.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/19/3/338