Nonvolatile Memory Effect in Organic Thin-Film Transistor Based on Aluminum Nanoparticle Floating Gate

A nonvolatile memory effect was observed in an organic thin-film transistor by introducing a floating gate structure. The floating gate was composed of an Al film in a thickness of nanometers, which was thermally deposited on a SiO2 insulator and exposed to air to spontaneously oxidize. It can be se...

Full description

Saved in:
Bibliographic Details
Published in:Chinese physics letters 2010, Vol.27 (1), p.275-278
Main Author: 王伟 马东阁
Format: Article
Language:English
Subjects:
Aluminum
Gates
Illumination
Nanocomposites
Nanomaterials
Nanostructure
Semiconductor devices
Thin films
Transistors
有机薄膜晶体管
电流电压特性
纳米厚度
记忆效应
铝薄膜
非挥发性
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A nonvolatile memory effect was observed in an organic thin-film transistor by introducing a floating gate structure. The floating gate was composed of an Al film in a thickness of nanometers, which was thermally deposited on a SiO2 insulator and exposed to air to spontaneously oxidize. It can be seen that the transistors exhibit significant hysteresis behaviors and storage circles in current-voltage characteristics in the dark and under illumination, indicating that the transistors may act as a nonvolatile memory element. The operational mechanism is discussed in the cases of dark and illumination via charge trapping by the Al floating gate.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/27/1/018503