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Diode Pumped Operation of Tm,Ho:YVO4 Microchip Laser

A cryogenic and room-temperature diode pumped Tm,Ho:YVO4 microchip laser with 0.5 mm crystal length lasing around 2μm is demonstrated for the first time to our knowledge. Under cryogenic temperature of 77 K, as much as 1.2 W output and slope efficiency of 35% with respect to absorbed pump power are...

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Bibliographic Details
Published in:Chinese physics letters 2010-03, Vol.27 (3), p.152-154
Main Author: 李纲 姚宝权 张朝晖 王强 王月珠 鞠有伦
Format: Article
Language:English
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Summary:A cryogenic and room-temperature diode pumped Tm,Ho:YVO4 microchip laser with 0.5 mm crystal length lasing around 2μm is demonstrated for the first time to our knowledge. Under cryogenic temperature of 77 K, as much as 1.2 W output and slope efficiency of 35% with respect to absorbed pump power are obtained. At temperature of 5℃ the maximum output power of 48mW is obtained at an absorbed pump power of 503 mW, representing a 9.5% optical to optical conversion efficiency. In addition, as much as 8 mW single-frequency output lasing at 2052.6 nm is achieved at room temperature of 15℃.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/27/3/034201