Van der Pauw Hall Measurement on Intended Doped ZnO Films for p-Type Conductivity

A Van der Pauw Hall measurement is performed on the intended doped ZnO films （Na doped ZnO） grown by using the molecular beam epitaxial method. All as-grown samples show n-type conductivity, whereas the annealed samples （annealing temperature 900℃） show ambiguous carrier conductivity type （n- and p-...

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Bibliographic Details
Published in:Chinese physics letters 2010-06, Vol.27 (6), p.171-174
Main Authors: Guo, Yang, Liu, Yac-Ping, Li, Jun-Qiang, Zhang, Sheng-Li, Mei, Zeng-Xia, Du, Xiao-Long
Format: Article
Language:English
Subjects:
Annealing
Carriers
Epitaxial growth
Halls
Hall测量
Molecular beams
Photoconductivity
p型导电
p型掺杂
Voltage
Zinc oxide
ZnO薄膜
分子束外延法
氧化锌薄膜
电导率测量
退火温度
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Summary:A Van der Pauw Hall measurement is performed on the intended doped ZnO films （Na doped ZnO） grown by using the molecular beam epitaxial method. All as-grown samples show n-type conductivity, whereas the annealed samples （annealing temperature 900℃） show ambiguous carrier conductivity type （n- and p-type） in the automatic Van der Pauw Hall measurement. A similar result has been observed in Li doped ZnO and in as-doped ZnO films by other groups before. However, by tracing the Hall voltage in the Van der Pauw Hall measurement, it is found that this alternative appearance of both n- and p-type conductivity is not intrinsic behavior of the intended doped ZnO films, but is due to the persistent photoconductivity effect in ZnO. The persistent photoconductivity effect would strongly affect the accurate determination of the carrier conductivity type of a highly resistive intended doped ZnO sample.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/27/6/067203