Annealing Effect of Pulsed Laser Deposited Transparent Conductive Ta-Doped Titanium Oxide Films

Tantalum-doped TiO sub(2)films were deposited on glass at 300[degrees]C by pulsed laser deposition (PLD). After post-annealing in vacuum (~10 super(-1) Pa) at temperatures ranging from 450[degrees]C to 650[degrees]C, these films were crystallized into an anatase TiO sub(2) structure and presented go...

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Bibliographic Details
Published in:Chinese physics letters 2011-11, Vol.28 (11), p.118102-1-118102-4
Main Authors: Wu, Bin-Bin (彬彬 吴), Pan, Feng-Ming (风明 潘), Yang, Yu-E (玉娥 杨)
Format: Article
Language:English
Subjects:
Anatase
Annealing
Deposition
Electrical resistivity
Oxides
Pulsed laser deposition
Pulsed lasers
Titanium dioxide
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Summary:Tantalum-doped TiO sub(2)films were deposited on glass at 300[degrees]C by pulsed laser deposition (PLD). After post-annealing in vacuum (~10 super(-1) Pa) at temperatures ranging from 450[degrees]C to 650[degrees]C, these films were crystallized into an anatase TiO sub(2) structure and presented good conductive features. With increasing annealing temperature up to 550[degrees]C, the resistivity of the films was measured to be around 8.7 x 10 super(-1) [Omega] times cm. Such films exhibit high transparency of over 80% in the visible light region. These results indicate that tantalum-doped anatase TiO sub(2) films have a great potential as transparent conducting oxides
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/28/11/118102