Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates

Wafer-scale graphene sseld-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al sub(2) sub(3) as the top-gate dielectric. The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate. The graphene on the sil...

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Bibliographic Details
Published in:Chinese physics letters 2011-12, Vol.28 (12), p.127202-1-127202-4
Main Authors: Pan, Hong-Liang (洪亮潘), Jin, Zhi (智金), Ma, Peng (芃麻), Guo, Jian-Nan (建楠郭), Liu, Xin-Yu (新宇刘), Ye, Tian-Chun (甜春叶), Li, Jia (佳李), Dun, Shao-Bo (少博敦), Feng, Zhi-Hong (志红冯)
Format: Article
Language:English
Subjects:
Aluminum oxide
Channels
Deposition
Devices
Field effect transistors
Graphene
Semiconductor devices
Silicon carbide
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Summary:Wafer-scale graphene sseld-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al sub(2) sub(3) as the top-gate dielectric. The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate. The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found. For the intrinsic characteristic of this particular channel material, the devices cannot be switched off. The cut-off frequencies of these graphene field-effect transistors, which have a gate length of 1 mu m, are larger than 800 MHz. The largest one can reach 1.24 GHz. There are greater than 95% active devices that can be successfully applied. We thus succeed in fabricating wafer-scale gigahertz graphene field-effect transistors, which paves the way for high-performance graphene devices and circuits
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/28/12/127202