Electron mobility in GaAs due to piezoelectric scattering

Theoretical studies so far on piezoelectric scattering have resulted in a mobility behaviour of mu approx. T super(- one half ) in which mu continues to fall indefinitely with increasing temperature T. Such a behaviour cannot tell us where this scattering will become unimportant, as might be expecte...

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Bibliographic Details
Published in:Semiconductor science and technology 1995-11, Vol.10 (11), p.1458-1462
Main Authors: Alkan, B, Unal, B, Ozdemir, A R
Format: Article
Language:English
Subjects:
Calculations
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electron scattering
Electron transport properties
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
Piezoelectricity
Thermal effects
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Summary:Theoretical studies so far on piezoelectric scattering have resulted in a mobility behaviour of mu approx. T super(- one half ) in which mu continues to fall indefinitely with increasing temperature T. Such a behaviour cannot tell us where this scattering will become unimportant, as might be expected on physical grounds. The correct behaviour should be a falling curve first, followed by a gradually increasing one when the scattering ceases to be effective. In this work, by using the force-force correlation function technique within the linear response formalism, we obtained a mu versus T curve that shows just this behaviour.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/10/11/005