Application of low-defect reactive ion etching in plasma in combination with overgrowth for formation of GaAs/AlGaAs submicrometre structures

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Bibliographic Details
Published in:Semiconductor science and technology 1996-05, Vol.11 (5), p.797-800
Main Authors: Timofeev, F N, Gurevich, S A, Smirnitskii, V B, Gladysheva, L B, Yavich, B S, Usikov, A
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/11/5/023