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High-mobility two-dimensional electron gases in Si/SiGe heterostructures on relaxed SiGe layers grown at high temperature

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Bibliographic Details
Published in:	Semiconductor science and technology 1997-08, Vol.12 (8), p.943-946
Main Authors:	Churchill, A C, Robbins, D J, Wallis, D J, Griffin, N, Paul, D J, Pidduck, A J
Format:	Article
Language:	English
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions Physics
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