Reactor design rules for GaN epitaxial layer growths on sapphire in metal-organic chemical vapour deposition

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Bibliographic Details
Published in:Semiconductor science and technology 2000-08, Vol.15 (8), p.868-874
Main Authors: Kim, Keunjoo, Noh, Sam Kyu
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Iii-v semiconductors
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/15/8/314