Characterization of deep defects in CdxHg1−xTe by injection-level spectroscopy of carrier lifetime

Saved in:
Bibliographic Details
Published in:Semiconductor science and technology 2002-07, Vol.17 (7), p.682-685
Main Authors: Gnatyuk, V A, Karazhanov, S Zh
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Photodetectors (including infrared and CCD detectors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/17/7/308