Oxide degradation mechanism in stacked-gate flash memory using the cell array stress test

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Bibliographic Details
Published in:Semiconductor science and technology 2003-09, Vol.18 (9), p.857-863
Main Authors: Tsai, Shih-Hung, Hung, Jui-Sheng, Wang, Na-Fu, Horng, Jui-Hong, Houng, Mau-Phon, Wang, Yeong-Her
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/18/9/308