Heterojunction photodiodes fabricated from Ge/Si (1 0 0) layers grown by low-energy plasma-enhanced CVD

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Bibliographic Details
Published in:Semiconductor science and technology 2007-01, Vol.22 (1), p.S26-S28
Main Authors: Isella, G, Osmond, J, Kummer, M, Kaufmann, R, von Känel, H
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/22/1/S06