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Carbon in the presence of high oxygen levels in polysilicon: the effect on poly-to-poly dielectric breakdown

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Bibliographic Details
Published in:Semiconductor science and technology 2007-03, Vol.22 (3), p.179-185
Main Authors: Hafer, Richard F, Moss, T S
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/22/3/002